Radiation Enhanced Diffusion of Nickel in Silicon Diodes
نویسندگان
چکیده
High-power P-I-N diodes (2.5 kV, 150 A) with sputtered NiV and NiCr layers at anode were implanted by 10 MeV helium ions and subsequently annealed in the range 550 – 800 C. The devices were characterized using XPS, DLTS and OCVD. Leakage current, forward voltage drop and reverse recovery measurements were measured as well. The Radiation Enhanced Diffusion (RED) of nickel was registered after 20 min. annealing between 675 and 725 C. The evidence was provided by depth profiling (DLTS). The effect of the RED of nickel on device electrical parameters was evaluated. Contrary to the palladium, the RED of nickel is not sufficient for the local control of carrier lifetime in power devices.
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